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Defect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen

dc.contributor.authorHoussa, Michel
dc.contributor.authorHeyns, Marc
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-15T13:57:11Z
dc.date.available2021-10-15T13:57:11Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9066
dc.sourceIIOimport
dc.titleDefect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen
dc.typeOral presentation
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.conferenceCECAM Workshop on Atomic Processes at Semiconductor-Oxide Interfaces in Microelectronics Devices
dc.source.conferencedate13/09/2004
dc.source.conferencelocationLyon France
imec.availabilityPublished - imec


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