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Double dipole lithography for 65-nm node and beyond: a technology readiness review

dc.contributor.authorHsu, Stephen
dc.contributor.authorEurlings, Mark
dc.contributor.authorHendrickx, Eric
dc.contributor.authorVan Den Broeke, Douglas J.
dc.contributor.authorChiou, Tsann-Bim
dc.contributor.authorFung Chen, J.
dc.contributor.authorLaidig, Thomas L.
dc.contributor.authorShi, Xuelong
dc.contributor.authorFinders, Jo
dc.date.accessioned2021-10-15T13:58:01Z
dc.date.available2021-10-15T13:58:01Z
dc.date.issued2004-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9070
dc.sourceIIOimport
dc.titleDouble dipole lithography for 65-nm node and beyond: a technology readiness review
dc.typeProceedings paper
dc.contributor.imecauthorHendrickx, Eric
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage481
dc.source.endpage498
dc.source.conferencePhotomask and Next-Generation Lithography Mask Technology XI
dc.source.conferencedate14/04/2004
dc.source.conferencelocationYokohama Japan
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 5446


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