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Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA
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Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA
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Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Jeamsaksiri, Wutthinan
;
Mercha, Abdelkarim
;
Ramos, Javier
;
Linten, Dimitri
;
Thijs, Steven
;
Jenei, Snezana
;
Detcheverry, Celine
;
Wambacq, Piet
;
Velghe, Rudolf
;
Decoutere, Stefaan
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1960
since deposited on 2021-10-15
1
last month
Acq. date: 2026-01-09
Citations
Metrics
Views
1960
since deposited on 2021-10-15
1
last month
Acq. date: 2026-01-09
Citations