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dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRamos, Javier
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorJenei, Snezana
dc.contributor.authorDetcheverry, Celine
dc.contributor.authorWambacq, Piet
dc.contributor.authorVelghe, Rudolf
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-15T14:03:27Z
dc.date.available2021-10-15T14:03:27Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9095
dc.sourceIIOimport
dc.titleIntegration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage100
dc.source.endpage101
dc.source.conferenceTechnical Digest VLSI Technology Symposium
dc.source.conferencedate15/06/2004
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec


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