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Sub-65nm etch challenges of high-k and metal gate materials

dc.contributor.authorKota, Gowri P.
dc.contributor.authorRamalingam, Shyam
dc.contributor.authorLee, Steve
dc.contributor.authorCoenegrachts, Bart
dc.contributor.authorLee, Chris
dc.contributor.authorBeckx, Stephan
dc.contributor.authorDemand, Marc
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-15T14:14:02Z
dc.date.available2021-10-15T14:14:02Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9143
dc.sourceIIOimport
dc.titleSub-65nm etch challenges of high-k and metal gate materials
dc.typeProceedings paper
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage133
dc.source.endpage138
dc.source.conference26th International Symposium on Dry Process
dc.source.conferencedate30/11/2004
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - open access
imec.internalnotesP-23


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