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Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications

dc.contributor.authorKottantharayil, Anil
dc.contributor.authorVeloso, Anabela
dc.contributor.authorKubicek, Stefan
dc.contributor.authorSchram, Tom
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDevriendt, Katia
dc.contributor.authorLauwers, Anne
dc.contributor.authorBrus, Stephan
dc.contributor.authorHenson, Kirklen
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-15T14:14:18Z
dc.date.available2021-10-15T14:14:18Z
dc.date.issued2004-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9144
dc.sourceIIOimport
dc.titleDemonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.source.peerreviewyes
dc.source.beginpage190
dc.source.endpage191
dc.source.conferenceTechnical Digest VLSI Technology Symposium
dc.source.conferencedate15/06/2004
dc.source.conferencelocationHonolulu, HI US
imec.availabilityPublished - imec


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