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Method for determining the effectiveness of silicon nitride as a barrier layer for HfO2

dc.contributor.authorKraus, Harald
dc.contributor.authorSnow, Jim
dc.contributor.authorVan Doorne, Patrick
dc.contributor.authorFyen, Wim
dc.contributor.authorMertens, Paul
dc.contributor.authorKovacs, Frederic
dc.date.accessioned2021-10-15T14:15:18Z
dc.date.available2021-10-15T14:15:18Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9148
dc.sourceIIOimport
dc.titleMethod for determining the effectiveness of silicon nitride as a barrier layer for HfO2
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.source.peerreviewno
dc.source.beginpage47
dc.source.endpage57
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 2003-22


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