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On the behaviour of the divacancy in silicon during anneals between 150 and 350 C

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Bavel, Mieke
dc.contributor.authorLangouche, G.
dc.contributor.authorStesmans, Andre
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T13:17:55Z
dc.date.available2021-09-29T13:17:55Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/915
dc.sourceIIOimport
dc.titleOn the behaviour of the divacancy in silicon during anneals between 150 and 350 C
dc.typeProceedings paper
dc.contributor.imecauthorVan Bavel, Mieke
dc.contributor.imecauthorStesmans, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1147
dc.source.endpage1152
dc.source.conferenceICDS-18. Proceedings 18th International Conference on Defects in Semiconductors - ; July 23 -28, 1995; Sendai, Japan.
dc.source.conferencedate23/07/1995
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - open access


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