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Integration of low and high temperature junction anneals for 45nm CMOS

dc.contributor.authorLindsay, Richard
dc.contributor.authorPawlak, Bartek
dc.contributor.authorHenson, Kirklen
dc.contributor.authorSatta, Alessandra
dc.contributor.authorSeveri, Simone
dc.contributor.authorLauwers, Anne
dc.contributor.authorSurdeanu, Radu
dc.contributor.authorMcCoy, S.
dc.contributor.authorGelpey, J.
dc.contributor.authorPagès, Xavier
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T14:28:47Z
dc.date.available2021-10-15T14:28:47Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9206
dc.sourceIIOimport
dc.titleIntegration of low and high temperature junction anneals for 45nm CMOS
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage145
dc.source.endpage156
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II
dc.source.conferencedate9/05/2004
dc.source.conferencelocationSan Antonio, TX USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2004-01


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