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(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices

dc.contributor.authorLoo, Roger
dc.contributor.authorDelhougne, Romain
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorJanssens, Tom
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T14:33:23Z
dc.date.available2021-10-15T14:33:23Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9223
dc.sourceIIOimport
dc.title(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3
dc.source.endpage14
dc.source.conferenceHigh-Mobility Group-IV Materials and Devices
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 809


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