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Black-gate induced noise overshoot in partially-depleted SOI MOSFETs

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorSmolanka, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T14:35:01Z
dc.date.available2021-10-15T14:35:01Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9230
dc.sourceIIOimport
dc.titleBlack-gate induced noise overshoot in partially-depleted SOI MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceScience and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment
dc.source.conferencedate2/04/2004
dc.source.conferencelocationKiev Ukraine
imec.availabilityPublished - imec
imec.internalnotesNATO Advanced Research Workshop


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