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Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorSmolanka, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T14:35:16Z
dc.date.available2021-10-15T14:35:16Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9231
dc.sourceIIOimport
dc.titleInfluence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage357
dc.source.endpage360
dc.source.conferenceProceedings of the 34th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate21/09/2004
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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