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He implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles

dc.contributor.authorLuysberg, M.
dc.contributor.authorHueging, N.
dc.contributor.authorUrban, K.
dc.contributor.authorBuca, D.
dc.contributor.authorHolländer, B.
dc.contributor.authorMantl, S.
dc.contributor.authorMorschbacher, M.
dc.contributor.authorFichner, P.F.P.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T14:36:16Z
dc.date.available2021-10-15T14:36:16Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9235
dc.sourceIIOimport
dc.titleHe implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage117
dc.source.endpage118
dc.source.conferenceProgram and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate17/05/2004
dc.source.conferencelocationFrankfurt am Oder Germany
imec.availabilityPublished - imec


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