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ALCVD hafnium silicates for low power gate stacks

dc.contributor.authorMaes, Jan
dc.contributor.authorLaitinen, O.
dc.contributor.authorDe Witte, Hilde
dc.contributor.authorDeweerd, Wim
dc.contributor.authorDelabie, Annelies
dc.contributor.authorConard, Thierry
dc.contributor.authorBrijs, Bert
dc.contributor.authorWang, C. - G.
dc.contributor.authorVelasco, H.
dc.contributor.authorWilk, G.
dc.date.accessioned2021-10-15T14:40:13Z
dc.date.available2021-10-15T14:40:13Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9251
dc.sourceIIOimport
dc.titleALCVD hafnium silicates for low power gate stacks
dc.typeOral presentation
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.conferenceAtomic Layer Deposition Conference
dc.source.conferencedate16/08/2004
dc.source.conferencelocationHelsinki Finland
imec.availabilityPublished - imec


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