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Strained Si on relaxed SiGe made by ion implantation and strain transfer

dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.contributor.authorHolländer, B.
dc.contributor.authorMörschbächer, M.
dc.contributor.authorTrinkhaus, H.
dc.contributor.authorLuysberg, M.
dc.contributor.authorHueging, N.
dc.contributor.authorHouben, L.
dc.contributor.authorCarius, R.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorSchäfer, H.
dc.date.accessioned2021-10-15T14:42:55Z
dc.date.available2021-10-15T14:42:55Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9262
dc.sourceIIOimport
dc.titleStrained Si on relaxed SiGe made by ion implantation and strain transfer
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage731
dc.source.endpage740
dc.source.conferenceSiGE: Materials, Processing, and Devices
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2004-07


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