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Strained silicon on relaxed SiGe made by strain transfer

dc.contributor.authorMantl, Siegfried
dc.contributor.authorBuca, Dan M.
dc.contributor.authorHolländer, Bernd
dc.contributor.authorTrinkaus, Helmut
dc.contributor.authorLuysberg, Martina
dc.contributor.authorHouben, L.
dc.contributor.authorCarius, Reinhard
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorSchäfer, Herbert
dc.date.accessioned2021-10-15T14:43:11Z
dc.date.available2021-10-15T14:43:11Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9263
dc.sourceIIOimport
dc.titleStrained silicon on relaxed SiGe made by strain transfer
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage111
dc.source.endpage112
dc.source.conferenceProgram and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate17/05/2004
dc.source.conferencelocationFrankfurt am Oder Germany
imec.availabilityPublished - imec


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