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Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs

dc.contributor.authorMartino, J.A.
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T14:46:56Z
dc.date.available2021-10-15T14:46:56Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9278
dc.sourceIIOimport
dc.titleTemperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage346
dc.source.endpage356
dc.source.conferenceHigh Purity Silicon VIII
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 2004-05


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