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Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects

dc.contributor.authorMunteanu, D.
dc.contributor.authorAutran, J.L.
dc.contributor.authorBescond, M.
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-15T15:01:06Z
dc.date.available2021-10-15T15:01:06Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9331
dc.sourceIIOimport
dc.titleImpact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects
dc.typeProceedings paper
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage39
dc.source.endpage42
dc.source.conferenceProceedings Ultimate Integration of Silicon (ULIS) Workshop
dc.source.conferencedate11/03/2004
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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