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The degradation of the electrical properties of IGBTS by 2-MeV electron irradiation and high-temperature

dc.contributor.authorNakabayashi, M.
dc.contributor.authorOhyama, H.
dc.contributor.authorHanano, N.
dc.contributor.authorHirao, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T15:02:51Z
dc.date.available2021-10-15T15:02:51Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9337
dc.sourceIIOimport
dc.titleThe degradation of the electrical properties of IGBTS by 2-MeV electron irradiation and high-temperature
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage183
dc.source.endpage186
dc.source.conferenceProceedings International Workshop on Radiation Effects in Semiconductor Devices for Space Applications
dc.source.conferencelocation
imec.availabilityPublished - imec


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