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The effect of ramp rate - short process time and partial reactions on Cobalt and Nickel silicide formation

dc.contributor.authorPagès, Xavier
dc.contributor.authorVan der Jeugd, Kees
dc.contributor.authorKuznetsov, Vladimir
dc.contributor.authorGranneman, Ernst
dc.contributor.authorLauwers, Anne
dc.contributor.authorLindsay, Richard
dc.date.accessioned2021-10-15T15:14:52Z
dc.date.available2021-10-15T15:14:52Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9381
dc.sourceIIOimport
dc.titleThe effect of ramp rate - short process time and partial reactions on Cobalt and Nickel silicide formation
dc.typeProceedings paper
dc.contributor.imecauthorVan der Jeugd, Kees
dc.contributor.imecauthorLauwers, Anne
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage174
dc.source.endpage182
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II
dc.source.conferencedate9/05/2004
dc.source.conferencelocationSan Antonio, TX USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2004-01


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