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HF based solutions for HfO2 removal. Effect of pH and temperature on HfO2:SiO2 etch selectivity

dc.contributor.authorParaschiv, Vasile
dc.contributor.authorClaes, Martine
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorBoullart, Werner
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-10-15T15:18:45Z
dc.date.available2021-10-15T15:18:45Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9395
dc.sourceIIOimport
dc.titleHF based solutions for HfO2 removal. Effect of pH and temperature on HfO2:SiO2 etch selectivity
dc.typeOral presentation
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.conference7th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate20/09/2004
dc.source.conferencelocationBrussels Belgium
imec.availabilityPublished - imec


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