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The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer

dc.contributor.authorPawlak, Bartek
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLindsay, Richard
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorRoozeboom, F.
dc.contributor.authorDelhougne, Romain
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMaex, Karen
dc.contributor.authorCowern, N.E.B.
dc.date.accessioned2021-10-15T15:23:07Z
dc.date.available2021-10-15T15:23:07Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9412
dc.sourceIIOimport
dc.titleThe role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpageC9.6/B9.6
dc.source.conferenceSilicon Front-End Junction Formation - Physics and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesSame paper in Symp. 'High-Mobility Group-IV Materials and Devices. MRS Proceedings 809(2004). See C9992


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