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A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks

dc.contributor.authorRanjan, R.
dc.contributor.authorPey, K.L.
dc.contributor.authorTung, C.H.
dc.contributor.authorTang, L.J.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBera, L.K.
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-15T15:45:35Z
dc.date.available2021-10-15T15:45:35Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9495
dc.sourceIIOimport
dc.titleA comprehensive model for breakdown mechanism in HfO2 high-k gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage725
dc.source.endpage728
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate13/12/2004
dc.source.conferencelocationSan Francisco USA
imec.availabilityPublished - imec


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