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Analysing impact of MOSFET oxide breakdown by small- and large-signal HF measurements

dc.contributor.authorSchreurs, Dominique
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-15T16:07:05Z
dc.date.available2021-10-15T16:07:05Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9572
dc.sourceIIOimport
dc.titleAnalysing impact of MOSFET oxide breakdown by small- and large-signal HF measurements
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage85
dc.source.endpage91
dc.source.conferenceAutomatic RF Techniques Group Conference (ARFTG)
dc.source.conferencedate30/11/2004
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec


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