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Device performance of 90nm nMOSFETs at liquid nitrogen temperature

dc.contributor.authorTakakura, K.
dc.contributor.authorHayama, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorLee, Shih-Chung
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T16:33:36Z
dc.date.available2021-10-15T16:33:36Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9661
dc.sourceIIOimport
dc.titleDevice performance of 90nm nMOSFETs at liquid nitrogen temperature
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage239
dc.source.endpage243
dc.source.conferenceProceedings WOLTE-6 - 6th European Workshop on Low Temperature Electronics
dc.source.conferencedate23/06/2004
dc.source.conferencelocationNoordwijk The Netherlands
imec.availabilityPublished - open access


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