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Plasma modification of Hf based high-k dielectrics: effect of nitridation and silicon nitride deposition

dc.contributor.authorTsai, W.
dc.contributor.authorMaes, J.W.
dc.contributor.authorDe Witte, Hilde
dc.contributor.authorChen, J.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorCarter, Richard
dc.contributor.authorRichard, Olivier
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorYoung, Edward
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-15T16:43:12Z
dc.date.available2021-10-15T16:43:12Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9691
dc.sourceIIOimport
dc.titlePlasma modification of Hf based high-k dielectrics: effect of nitridation and silicon nitride deposition
dc.typeProceedings paper
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage37
dc.source.endpage46
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 2003-22


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