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Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorGräf, D.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorMertens, Paul
dc.contributor.authorLambert, U.
dc.contributor.authorHeyns, Marc
dc.contributor.authorClaeys, C.
dc.contributor.authorRichter, H.
dc.contributor.authorWagner, Patrick
dc.date.accessioned2021-09-29T13:22:07Z
dc.date.available2021-09-29T13:22:07Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/973
dc.sourceIIOimport
dc.titleLattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques
dc.typeProceedings paper
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1755
dc.source.endpage1760
dc.source.conferenceProceedings 18th International Conference on Defects in Semiconductors - ICDS-18; July 23 -28, 1995; Sendai, Japan.
dc.source.conferencedate23/07/1995
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - open access
imec.internalnotesMaterials Science Forum Vols. 196-201


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