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(A)thermal migration of Ge during junction formation in s-Si grown on thin SiGe-buffer layers

dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorPawlak, Bartek
dc.contributor.authorJanssens, Tom
dc.contributor.authorBrijs, Bert
dc.contributor.authorDelhougne, Romain
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-15T17:24:58Z
dc.date.available2021-10-15T17:24:58Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9825
dc.sourceIIOimport
dc.title(A)thermal migration of Ge during junction formation in s-Si grown on thin SiGe-buffer layers
dc.typeOral presentation
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceSilicon Front-End Junction Formation - Physics and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesSame paper in Symp. 'High-Mobility Group-IV Materials and Devices. MRS Proceedings 809(2004). See C9991


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