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A Low-Frequency Noise Study of Hot-Carrier Stressing Effects in Submicron Si p-MOSFETs

dc.contributor.authorVasina, Petr
dc.contributor.authorSikula, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-09-29T13:23:11Z
dc.date.available2021-09-29T13:23:11Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/982
dc.sourceIIOimport
dc.titleA Low-Frequency Noise Study of Hot-Carrier Stressing Effects in Submicron Si p-MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference2nd ELEN Workshop; October 25-27, 1995; Grenoble, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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