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dc.contributor.authorVeloso, Anabela
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorBrus, Stephan
dc.contributor.authorKubicek, Stefan
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorSijmus, Bram
dc.contributor.authorDevriendt, Katia
dc.contributor.authorLauwers, Anne
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-15T17:32:11Z
dc.date.available2021-10-15T17:32:11Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9847
dc.sourceIIOimport
dc.titleWork function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.source.peerreviewno
dc.source.beginpage855
dc.source.endpage858
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate13/12/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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