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Failure rate predictions for 0.35μm flash EEPROM memories from accelerated read disturb tests

dc.contributor.authorVermeulen, Tom
dc.contributor.authorYao, Thierry
dc.contributor.authorLowe, Antony
dc.contributor.authorCacharelis, Philippe
dc.contributor.authorDegraeve, Robin
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-15T17:41:39Z
dc.date.available2021-10-15T17:41:39Z
dc.date.issued2004-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9877
dc.sourceIIOimport
dc.titleFailure rate predictions for 0.35μm flash EEPROM memories from accelerated read disturb tests
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage269
dc.source.endpage272
dc.source.conferenceProceedings of the 34th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate21/09/2004
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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