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Nitrided hafnium silicates for gate dielectrics

dc.contributor.authorWang, C.G.
dc.contributor.authorVelasco, H.
dc.contributor.authorVerghese, M.
dc.contributor.authorShero, E.
dc.contributor.authorWilk, G.
dc.contributor.authorMaes, Jan
dc.contributor.authorLaitinen, O.
dc.contributor.authorDeweerd, Wim
dc.contributor.authorDelabie, Annelies
dc.contributor.authorOpila, R.L.
dc.contributor.authorMathew, A.
dc.contributor.authorDemirkan, K.
dc.contributor.authorMorais, J.
dc.contributor.authorBaumvol, I.J.R.
dc.date.accessioned2021-10-15T17:48:35Z
dc.date.available2021-10-15T17:48:35Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9898
dc.sourceIIOimport
dc.titleNitrided hafnium silicates for gate dielectrics
dc.typeMeeting abstract
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorDelabie, Annelies
dc.source.peerreviewno
dc.source.beginpageDI-MoA5
dc.source.conferenceAVS 51st International Symposium
dc.source.conferencedate14/11/2004
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - imec


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