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Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

dc.contributor.authorYoung, C.D.
dc.contributor.authorKerber, Andreas
dc.contributor.authorHou, T.H.
dc.contributor.authorCartier, Eduard
dc.contributor.authorBrown, G.A.
dc.contributor.authorBersuker, G.
dc.contributor.authorKim, Y.
dc.contributor.authorLim, C.
dc.contributor.authorGutt, J.
dc.contributor.authorLysaght, P.
dc.contributor.authorBennett, J.
dc.contributor.authorLee, C.H.
dc.contributor.authorGopalan, S.
dc.contributor.authorGardner, M.
dc.contributor.authorZeitzoff, P.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMurto, R.W.
dc.contributor.authorHuff, H.R.
dc.date.accessioned2021-10-15T18:11:27Z
dc.date.available2021-10-15T18:11:27Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9966
dc.sourceIIOimport
dc.titleCharge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage347
dc.source.endpage359
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 2003-22


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