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HfO2 and HfSixOyNz high-k layers deposited by MOCVD in mixed gas flows of N2O and O2

dc.contributor.authorZhao, Chao
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorConard, Thierry
dc.contributor.authorXu, Zhen
dc.contributor.authorRichard, Olivier
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T18:16:06Z
dc.date.available2021-10-15T18:16:06Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9979
dc.sourceIIOimport
dc.titleHfO2 and HfSixOyNz high-k layers deposited by MOCVD in mixed gas flows of N2O and O2
dc.typeProceedings paper
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage101
dc.source.endpage111
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-22


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