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Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: preparation from gas/solid reaction and downscaling to an area of 0.25 μm²
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Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: preparation from gas/solid reaction and downscaling to an area of 0.25 μm²
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