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a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm
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a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm
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