Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon
Statistics
Statistics by Category
Download view's map
PNG
JPEG/JPG
Reports
Most viewed
Most viewed per month
Top city views
File Visits
Export Excel
Export CSV
Item
Views
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon
1341