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Molecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaning
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Molecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaning
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