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On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor
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On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor
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