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Si-cap-free SiGe p-channel Fin FETS and gate-all-around transistors in a replacement metal gate Process: interface trap density reduction and performance improvement by high-pressure deuterium anneal
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Si-cap-free SiGe p-channel Fin FETS and gate-all-around transistors in a replacement metal gate Process: interface trap density reduction and performance improvement by high-pressure deuterium anneal
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