Browsing by Author "Afanas'ev, V."
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Publication Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy
Proceedings paper2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.189-192Publication Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra
Journal article2021, JOURNAL OF APPLIED PHYSICS, (129) 15, p.155302Publication Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Journal article2005, Microelectronic Engineering, 80, p.280-283Publication Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability
Proceedings paper2021, IEEE International Memory Workshop (IMW), MAY 16-19, 2021, p.111-114Publication Trap-assisted tunneling in high permittivity gate dielectric stacks
Journal article2000, J. Appl. Physics, (87) 12, p.8615-8620