Browsing by Author "Afanas'ev, V.V."
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Publication Atomic layer deposition of HfO2 thin films on InxGa1-xAs
;O'Mahony, A. ;O'Connor, E. ;Long, R. ;Thomas, K. ;Povey, I.M. ;Hurley, P.K. ;Pemble, M.E.Brennan, B.Oral presentation2008, 8th International Conference on Atomic Layer Deposition - ALDPublication Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.671-685Publication Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Meeting abstract2008, 214th ECS Meeting, 12/10/2008, p.2449Publication Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission
Journal article2003, Applied Physics Letters, (82) 2, p.245-247Publication Effect of the composition on the bandgap width of high-k MexTiyOz (Me=Hf,Ta, Sr)
Journal article2011, Thin Solid Films, (519) 17, p.5730-5733Publication Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
Journal article2008, Applied Physics Letters, (92) 2, p.22109Publication Electronic structure of the interface of aluminum nitride with Si(100)
Journal article2008, Journal of Applied Physics, (104) 9, p.93713Publication Paramagnetic point defects at interfacial layer in biaxial tensile strained (100)Si/SiO2
Journal article2008, Journal of Applied Physics, (103) 3, p.33703