Repository logo Institutional repository
  • Communities & Collections
  • Browse
  • Site
Search repository
High contrast
  1. Home
  2. Browse by Author

Browsing by Author "Afanas'ev, V.V."

Filter results by typing the first few letters
Now showing 1 - 8 of 8
  • Results Per Page
  • Sort Options
  • Loading...
    Thumbnail Image
    Publication

    Atomic layer deposition of HfO2 thin films on InxGa1-xAs

    O'Mahony, A.
    ;
    O'Connor, E.
    ;
    Long, R.
    ;
    Thomas, K.
    ;
    Povey, I.M.
    ;
    Hurley, P.K.
    ;
    Pemble, M.E.
    ;
    Brennan, B.
    Oral presentation
    2008, 8th International Conference on Atomic Layer Deposition - ALD
  • Loading...
    Thumbnail Image
    Publication

    Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

    Delabie, Annelies  
    ;
    Alian, AliReza  
    ;
    Bellenger, Florence
    ;
    Brammertz, Guy  
    ;
    Brunco, David
    Proceedings paper
    2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.671-685
  • Loading...
    Thumbnail Image
    Publication

    Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

    Delabie, Annelies  
    ;
    Caymax, Matty  
    ;
    Bellenger, Florence
    ;
    Brammertz, Guy  
    ;
    Conard, Thierry  
    Meeting abstract
    2008, 214th ECS Meeting, 12/10/2008, p.2449
  • Loading...
    Thumbnail Image
    Publication

    Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission

    Afanas'ev, V.V.
    ;
    Stesmans, Andre  
    ;
    Tsai, Wilman
    Journal article
    2003, Applied Physics Letters, (82) 2, p.245-247
  • Loading...
    Thumbnail Image
    Publication

    Effect of the composition on the bandgap width of high-k MexTiyOz (Me=Hf,Ta, Sr)

    Wang, Wan-Chih
    ;
    Badylevich, V.
    ;
    Afanas'ev, V.V.
    ;
    Stesmans, Andre  
    ;
    Popovici, Mihaela Ioana  
    Journal article
    2011, Thin Solid Films, (519) 17, p.5730-5733
  • Loading...
    Thumbnail Image
    Publication

    Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

    Afanas'ev, V.V.
    ;
    Stesmans, Andre  
    ;
    Delabie, Annelies  
    ;
    Bellenger, Florence
    ;
    Houssa, Michel  
    Journal article
    2008, Applied Physics Letters, (92) 2, p.22109
  • Loading...
    Thumbnail Image
    Publication

    Electronic structure of the interface of aluminum nitride with Si(100)

    Badylevich, M.
    ;
    Shamuilia, S.
    ;
    Afanas'ev, V.V.
    ;
    Stesmans, Andre  
    ;
    Fedorenko, Y.G.
    ;
    Zhao, Chao
    Journal article
    2008, Journal of Applied Physics, (104) 9, p.93713
  • Loading...
    Thumbnail Image
    Publication

    Paramagnetic point defects at interfacial layer in biaxial tensile strained (100)Si/SiO2

    Somers, P.
    ;
    Stesmans, Andre  
    ;
    Afanas'ev, V.V.
    ;
    Claeys, Cor
    ;
    Simoen, Eddy  
    Journal article
    2008, Journal of Applied Physics, (103) 3, p.33703

Follow imec on

VimeoLinkedInFacebook

The repository

  • Contact us
  • Policy
  • About imec
Privacy statement | Cookie settings