Browsing by Author "Afanas'ev, Valeri V."
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Publication Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Journal article2020, ECS Journal of Solid State Science and Technology, (9) 9, p.93001Publication Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors
Journal article2023, IEEE ELECTRON DEVICE LETTERS, (44) 7, p.1092-1095Publication Defect profiling in FEFET Si:HfO2 layers
Journal article2020, Applied Physics Letters, (117) 20, p.203504Publication Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1xGex/SiO2 heterostructures
Journal article2012, Journal of Applied Physics, (112) 7, p.74501Publication Electron trapping in ferroelectric HfO2
Publication Material-selective doping of 2D TMDC through AlxOy encapsulation
Journal article2019, ACS Applied Materials & Interfaces, (11) 45, p.42697-42707