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Browsing by Author "Alam, M.A."

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    A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

    Alam, M.A.
    ;
    Green, Martin
    ;
    Ho, M.Y.
    ;
    Vandervorst, Wilfried  
    ;
    Brijs, Bert
    ;
    Conard, Thierry  
    Oral presentation
    2002, MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOS
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    Experimental identification of unique oxide defect regions by characteristic response of charge pumping

    Masuduzzaman, M.
    ;
    Islam, Ahmad
    ;
    Degraeve, Robin  
    ;
    Cho, Moon Ju
    ;
    Zahid, Mohammed
    ;
    Alam, M.A.
    Proceedings paper
    2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.207-212
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    Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers

    Alam, M.A.
    ;
    Green, Martin
    Journal article
    2003, Journal of Applied Physics, (94) 5, p.3403-3413

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