Browsing by Author "Alam, M.A."
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Publication A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Oral presentation2002, MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOSPublication Experimental identification of unique oxide defect regions by characteristic response of charge pumping
Proceedings paper2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.207-212Publication Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers
;Alam, M.A.Green, MartinJournal article2003, Journal of Applied Physics, (94) 5, p.3403-3413