Browsing by Author "Alawneh, Isam"
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Publication Characteristics of deep submicron n-MOSFETs in the temperature range 4.2 - 300 K
Meeting abstract1998, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 19/05/1998Publication Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K
Journal article1998, Journal de Physique IV, 8, p.3-3-Aug