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Conference contributions
Characteristics of deep submicron n-MOSFETs in the temperature range 4.2 - 300 K
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Characteristics of deep submicron n-MOSFETs in the temperature range 4.2 - 300 K
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Date
1998
Meeting abstract
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2406.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alawneh, Isam
;
Simoen, Eddy
;
Biesemans, Serge
;
De Meyer, Kristin
;
Claeys, Cor
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Abstract
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1876
since deposited on 2021-09-30
Acq. date: 2025-12-11
Citations
Metrics
Views
1876
since deposited on 2021-09-30
Acq. date: 2025-12-11
Citations