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Characteristics of deep submicron n-MOSFETs in the temperature range 4.2 - 300 K

Date

1998
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dc.contributor.authorAlawneh, Isam
dc.contributor.authorSimoen, Eddy
dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-30T11:24:50Z
dc.date.available2021-09-30T11:24:50Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2336
dc.source.conferenceBelgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting
dc.source.conferencedate19/05/1998
dc.source.conferencelocationNamur Belgium
dc.title

Characteristics of deep submicron n-MOSFETs in the temperature range 4.2 - 300 K

dc.typeMeeting abstract
dspace.entity.typePublication
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