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Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K
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Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K
Date
1998
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alawneh, Isam
;
Simoen, Eddy
;
Biesemans, Serge
;
De Meyer, Kristin
;
Claeys, C.
Journal
Journal de Physique IV
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1897
since deposited on 2021-09-30
Acq. date: 2025-10-23
Citations
Metrics
Views
1897
since deposited on 2021-09-30
Acq. date: 2025-10-23
Citations