Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K

dc.contributor.author	Alawneh, Isam
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Biesemans, Serge
dc.contributor.author	De Meyer, Kristin
dc.contributor.author	Claeys, C.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Biesemans, Serge
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-09-30T11:24:49Z
dc.date.available	2021-09-30T11:24:49Z
dc.date.embargo	9999-12-31
dc.date.issued	1998
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2335
dc.source.beginpage	3
dc.source.endpage	3-Aug
dc.source.journal	Journal de Physique IV
dc.source.volume	8
dc.title	Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K
dc.type	Journal article
dspace.entity.type	Publication
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