Browsing by Author "Alles, M. L."

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Geometry dependence of total dose effects in bulk FINFETs

Chatterjee, I
;
Zhang, E.X.
;
Buva, B. L.
;
Reed, Robert
;
Alles, M. L.
;
Nahatme, N. N.
;
BAll, D. R.
Journal article
2014, IEEE Transactions on Nuclear Science, (61) 6, p.2951-2958
Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

Zhang, E. Z
;
Fleetwood, D. M.
;
Hatchel, J. A.
;
Liang, C.
;
Reed, R.
;
Alles, M. L.
;
Schrimpf, R. D.
Journal article
2017, IEEE Transactions on Nuclear Science, (64) 1, p.226-232